FCH76N60NF datasheet
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О ДАТАШИТЕ
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МаркировкаFCH76N60NF
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ПроизводительFairchild Semiconductor
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ОписаниеFairchild Semiconductor FCH76N60NF Continuous Drain Current: 72.8 A Current - Continuous Drain (id) @ 25?° C: 72.8A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 600 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 92 S Gate Charge (qg) @ Vgs: 300nC @ 10V Input Capacitance (ciss) @ Vds: 11045pF @ 100V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Mounting Type: Through Hole Package / Case: TO-247-3 Power - Max: 543W Power Dissipation: 543 W Rds On (max) @ Id, Vgs: 38 mOhm @ 38A, 10V Resistance Drain-source Rds (on): 28.7 mOhms Series: SupreMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 5V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 600 V Resistance Drain-Source RDS (on): 28.7 mOhms Forward Transconductance gFS (Max / Min): 92 S Factory Pack Quantity: 150
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